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cystech electronics corp. spec. no. : c839v8 issued date : 2013.09.26 revised date : page no. : 1/12 MTC2590V8 cystek product specification n- and p-channel logic level enhancement mode mosfet MTC2590V8 description the MTC2590V8 consists of a n-channel and a p-ch annel enhancement-mode mosfet in a single dfn3 3 package, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the dfn3 3 package is universally preferred for all co mmercial-industrial surface mount applications. features ? simple drive requirement ? low on-resistance ? fast switching speed ? pb-free lead plating and halogen-free package equivalent circuit outline ordering information device package shipping MTC2590V8-0-t6-g dfn3 3 (pb-free lead plating an d halogen-free package) 3000 pcs / tape & reel MTC2590V8 dfn3 3 g gate s source d drain n-ch p-ch bv dss 30v -30v i d 6a -5a r dson(max.) 23m 50m pin 1 environment friendly grade : s for rohs compliant products, g for rohs compliant and green compound products packing spec, t6 : 3000 pc s / tape & reel,13? reel product rank, zero for no rank products product name
cystech electronics corp. spec. no. : c839v8 issued date : 2013.09.26 revised date : page no. : 2/12 MTC2590V8 cystek product specification absolute maximum ratings (t c =25 c, unless otherwise noted) limits parameter symbol n-channel p-channel unit drain-source breakdown voltage bv dss 30 -30 gate-source voltage v gs 20 20 v t a =25 c, v gs =10v (-10v) 6 -5 continuous drain current *2 t a =70 c, v gs =10v (-10v) i d 4.8 -4 pulsed drain current * 1 i dm 30 -30 single device operation 1.5 *2 total power dissipation single device value at dual operation p d 1.24 *2 a operating junction and storage temperature range tj; tstg -55~+150 c thermal data parameter symbol value unit max. thermal resistance, junction-to-ambient, single device operation 84 *2 c/w max. thermal resistance, junction-to-amb ient, single device value at dual operation r th,j-a 101 *2 c/w note : 1. pulse width limited by maximum junction temperature. 2. surface mounted on a 1 in2 pad of 2oz copper, t 5s. in practice r th,j-a will be determined by customer?s pcb characteristics. 216 c/w when mounted on a minimum pad of 2 oz. copper. n-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss 30 - - v gs =0v, i d =250 a v gs(th) 1 1.8 2.5 v v ds =v gs , i d =250 a i gss - - 100 na v gs =20v, v ds =0v - - 1 v ds =30v, v gs =0v i dss - - 10 a v ds =24v, v gs =0v, tj=70 c - 16 23 v gs =10v, i d =6a *r ds(on) - 28 40 m v gs =4.5v, i d =4a *g fs - 7 - s v ds =5v, i d =6a dynamic ciss - 758 - coss - 55 - crss - 61 - pf v ds =20v , v gs =0v , f=1mhz *t d(on) - 8 - *t r - 7 - *t d(off) - 24 - *t f - 13 - ns v ds =15v , i d =1a , v gs =10v , r g =6 *qg - 11 - *qgs - 2.9 - *qgd - 3.2 - nc v ds =15v , i d =6a , v gs =10v body diode *v sd - 0.78 1.2 v v gs= 0v, i s =2.3a *trr - 29 - ns *qrr - 10 - nc i s =5a, v gs =0v, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2%
cystech electronics corp. spec. no. : c839v8 issued date : 2013.09.26 revised date : page no. : 3/12 MTC2590V8 cystek product specification p-channel electrical characteristics (tc=25 c, unless otherwise specified) symbol min. typ. max. unit test conditions static bv dss -30 - - v gs =0, i d =-250 a v gs(th) -1.0 -1.7 -2.5 v v ds =v gs , i d =-250 a i gss - - 100 na v gs =20v, v ds =0v - - -1 v ds =-30v, v gs =0v i dss - - -10 a v ds =-24v, v gs =0v, tj=70 c - 38 50 v gs =-10v, i d =-5a *r ds(on) - 61 80 m v gs =-4.5v, i d =-4a *g fs - 7 - s v ds =-5v, i d =-5a dynamic ciss - 838 - coss - 64 - crss - 65 - pf v ds =-20v, v gs =0v, f=1mhz *td (on) - 9 - *tr - 7 - *td (off) - 40 - *tf - 13 - ns v ds =-15v, i d =-1a, v gs =-10v, r g =6 *qg - 14 - *qgs - 3.6 - *qgd - 3.3 - nc v ds =-15v, i d =-5a, v gs =-10v body diode *v sd - -0.82 -1.2 v v gs =0v, i s =-2.3a *trr - 32 - ns *qrr - 13.5 - nc i s =-4.5a, v gs =0v, di/dt=100a/ s *pulse test : pulse width 300 s, duty cycle 2% recommended soldering footprint unit : mm
cystech electronics corp. spec. no. : c839v8 issued date : 2013.09.26 revised date : page no. : 4/12 MTC2590V8 cystek product specification typical characteristics : q1( n-channel ) typical output characteristics 0 5 10 15 20 25 30 012345678910 v ds , drain-source voltage(v) i d , drain current(a) v gs =3v 10v, 9v, 8v, 7v, 6v, 5v, 4v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) bv dss , normalized drain-source breakdown voltage i d =250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =3.5v v gs =3v v gs =10v v gs =4v v gs =4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 i dr , reverse drain current(a) v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds(on) , normalized static drain- source on-state resistance v gs =4.5v, i d =4a v gs =10v, i d =6a v gs , gate-source voltage(v) r ds(on) , static drain-source on- state resistance(m) i d =6a i d =4a
cystech electronics corp. spec. no. : c839v8 issued date : 2013.09.26 revised date : page no. : 5/12 MTC2590V8 cystek product specification typical characteristics(cont.) : q1( n-channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) v gs(th) , normalizedthreshold voltage i d =250 a forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 i d , drain current(a) g fs , forward transfer admittance(s) v ds =10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 024681012 qg, total gate charge(nc) v gs , gate-source voltage(v) v ds =15v i d =6a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage(v) i d , drain current(a) dc 10ms 100ms 1ms 100 s ta=25c, tj=150c, v gs =10v, r ja =84c/w single pulse r ds( on) limited 1s maximum drain current vs junctiontemperature 0 1 2 3 4 5 6 7 25 50 75 100 125 150 175 tj, junction temperature(c) i d , maximum drain current(a) t a =25c, v gs =10v, r ja =84c/w
cystech electronics corp. spec. no. : c839v8 issued date : 2013.09.26 revised date : page no. : 6/12 MTC2590V8 cystek product specification typical characteristics(cont.) : q1( n-channel) typical transfer characteristics 0 5 10 15 20 25 30 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse power rating, junction to ambient 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( m ax) =150c t a =25c ja =84c/w transient thermal response curves 0.001 0.01 0.1 1 1.e-04 1.e-03 1.e-02 1.e-01 1.e+00 1.e+01 1.e+02 1.e+03 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *z jc (t) 4.r ja =84 c/w
cystech electronics corp. spec. no. : c839v8 issued date : 2013.09.26 revised date : page no. : 7/12 MTC2590V8 cystek product specification typical characteristics : q2( p-channel) typical output characteristics 0 5 10 15 20 25 30 012345678910 -v ds , drain-source voltage(v) -i d , drain current (a) 10v, 9v, 8v, 7v, 6v, 5v -v gs =3v -v gs =4v brekdown voltage vs ambient temperature 0.4 0.6 0.8 1 1.2 1.4 1.6 -75 -50 -25 0 25 50 75 100 125 150 175 tj, junction temperature(c) -bv dss , normalized drain-source breakdown voltage i d =-250 a, v gs =0v static drain-source on-state resistance vs drain current 10 100 1000 0.01 0.1 1 10 100 -i d , drain current(a) r ds(on) , static drain-source on-state resistance(m) v gs =-3v v gs =-10v v gs =-4v v gs =-4.5v reverse drain current vs source-drain voltage 0.2 0.4 0.6 0.8 1 1.2 024681 -i dr , reverse drain current (a) -v sd , source-drain voltage(v) 0 tj=25c tj=150c v gs =0v static drain-source on-state resistance vs gate-source voltage 0 20 40 60 80 100 120 140 160 180 200 024681 0 drain-source on-state resistance vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 1.6 -60 -20 20 60 100 140 180 tj, junction temperature(c) r ds( on) , normalized static drain- source on-state resistance v gs =-4.5v, i d =-4a v gs =-10v, i d =-5a -v gs , gate-source voltage(v) r ds( on) , static drain-source on- state resistance(m) i d =-5a i d =-4a
cystech electronics corp. spec. no. : c839v8 issued date : 2013.09.26 revised date : page no. : 8/12 MTC2590V8 cystek product specification typical characteristics(cont.) : q2(p-channel) capacitance vs drain-to-source voltage 10 100 1000 10000 0.1 1 10 100 -v ds , drain-source voltage(v) capacitance---(pf) c oss ciss crss threshold voltage vs junction tempearture 0.4 0.6 0.8 1 1.2 1.4 -60 -40 -20 0 20 40 60 80 100 120 140 160 tj, junction temperature(c) -v gs( th) ,normalized threshold voltage i d =-250 a forward transfer admittance vs drain current 0.01 0.1 1 10 0.001 0.01 0.1 1 10 -i d , drain current(a) g fs , forward transfer admittance-(s) v ds =-10v pulsed ta=25c gate charge characteristics 0 2 4 6 8 10 0246810121416 qg, total gate charge(nc) -v gs , gate-source voltage(v) v ds =-15v i d =-5a maximum safe operating area 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds , drain-source voltage(v) -i d , drain current (a) dc 10ms 100ms 1ms 100 s r ds( on) limited t a =25c, tj=150c, v gs =-10v, r ja =84c/w single pulse 1s maximum drain current vs junctiontemperature 0 1 2 3 4 5 6 25 50 75 100 125 150 175 tj, junction temperature(c) -i d , maximum drain current(a) t a =25c, v gs =-10v, r ja =84c/w
cystech electronics corp. spec. no. : c839v8 issued date : 2013.09.26 revised date : page no. : 9/12 MTC2590V8 cystek product specification typical characteristics(cont.) : q2(p-channel) typical transfer characteristics 0 5 10 15 20 25 30 012345 v gs , gate-source voltage(v) i d , drain current(a) v ds =10v single pulse power rating, junction to ambient 0 20 40 60 80 100 120 140 160 180 200 0.0001 0.001 0.01 0.1 1 10 100 pulse width(s) power (w) t j( max) =150c t a =25c ja =84c/w transient thermal response curves 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , square wave pulse duration(s) normalized transient thermal resistance single pulse 0.01 0.02 0.05 0.1 0.2 d=0.5 1.r ja (t)=r(t)*r ja 2.duty factor, d=t 1 /t 2 3.t jm -t c =p dm *z jc (t) 4.r ja =84 c/w
cystech electronics corp. spec. no. : c839v8 issued date : 2013.09.26 revised date : page no. : 10/12 MTC2590V8 cystek product specification reel dimension carrier tape dimension
cystech electronics corp. spec. no. : c839v8 issued date : 2013.09.26 revised date : page no. : 11/12 MTC2590V8 cystek product specification recommended wave soldering condition product peak temperature soldering time pb-free devices 260 +0/-5 c 5 +1/-1 seconds recommended temperature profile for ir reflow profile feature sn-pb eutectic assembly pb-free assembly average ramp-up rate (tsmax to tp) 3 c/second max. 3 c/second max. preheat ? temperature min(t s min) ? temperature max(t s max) ? time(ts min to ts max ) 100 c 150 c 60-120 seconds 150 c 200 c 60-180 seconds time maintained above: ? temperature (t l ) ? time (t l ) 183 c 60-150 seconds 217 c 60-150 seconds peak temperature(t p ) 240 +0/-5 c 260 +0/-5 c time within 5 c of actual peak temperature(tp) 10-30 seconds 20-40 seconds ramp down rate 6 c/second max. 6 c/second max. time 25 c to peak temperature 6 minutes max. 8 minutes max. note : all temperatures refer to topside of t he package, measured on the package body surface.
spec. no. : c839v8 issued date : 2013.09.26 revised date : page no. : 12/12 cystech electronics corp. MTC2590V8 cystek product specification dfn3 3 dimension millimeters inches millimeters inches dim min. max. min. max. dim min. max. min. max. a 0.650 0.850 0.026 0.033 b 0.200 0.400 0.008 0.016 a1 0.152 ref 0.006 ref e 0.550 0.750 0.022 0.030 a2 0.000 0.050 0.000 0.002 l 0.300 0.500 0.012 0.020 d 2.900 3.100 0.114 0.122 l1 0.180 0.480 0.007 0.019 d1 0.935 1.135 0.037 0.045 l2 0.000 0.100 0.000 0.004 d2 0.280 0.480 0.011 0.019 l3 0.000 0.100 0.000 0.004 e 2.900 3.100 0.114 0.122 h 0.315 0.515 0.012 0.020 e1 3.150 3.450 0.124 0.136 9 13 9 13 e2 1.535 1.935 0.060 0.076 notes: 1.controlling dimension: millimeters. 2.maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.if there is any question with packing specification or packing method, please c ontact your local cystek sales office. material: ? lead: pure tin plated. ? mold compound: epoxy resin family, flammability solid burning class: ul94v-0. important notice: ? all rights are reserved. reproduction in whole or in part is prohibited without the prior written approval of cystek. ? cystek reserves the right to make changes to its products without notice. ? cystek semiconductor products are not warranted to be suitable for use in life-support applications, or systems. ? cystek assumes no liability for any consequence of customer pr oduct design, infringement of pat ents, or application assistance . marking: 8-lead dfn3 3 plastic package cystek package code: v8 date code s1 g1 s2 g2 d1 d1 d2 d2 2590

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